Power Integrations, a leader in high-voltage integrated circuits for energy-efficient power conversion, has introduced a 1700 V Gallium Nitride (GaN) switcher IC, further elevating the company’s position at the forefront of power semiconductor innovation. The new device, part of the company’s InnoMux™-2 family of single-stage, multi-output offline power supply ICs, utilizes the industry’s first 1700 V GaN switch, marking another milestone in the evolution of GaN-based power devices.
The 1700 V InnoMux-2 IC is designed to handle high-voltage applications such as automotive chargers, solar inverters, three-phase meters, and a wide range of industrial power systems. It provides up to three independently regulated outputs with a level of accuracy within one percent. This makes it an ideal solution for applications that demand high efficiency and reliable power conversion. The device operates with an input voltage of up to 1000 VDC in a flyback configuration, ensuring superior performance and efficiency. With the ability to achieve over 90% efficiency, the IC can eliminate the need for additional post-regulators, further improving overall system efficiency by approximately 10%.
Setting a New Standard for GaN Technology
The introduction of the 1700 V GaN switcher IC is a significant leap forward for the company, building on the success of its previous GaN devices, including 900 V and 1250 V products launched in 2023. Power Integrations’ proprietary PowiGaN™ technology has been instrumental in developing these high-performance devices, which are now capable of operating at much higher voltage levels than previous GaN-based products.
Radu Barsan, vice president of technology at Power Integrations, expressed his enthusiasm about the rapid progress the company has made in GaN technology. “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V, and now 1700 V,” he said. “The new InnoMux-2 ICs combine 1700 V GaN with several other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero-voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses.”
These advancements in GaN technology provide several key benefits, including reduced size and weight of power supplies, higher power density, and improved system efficiency—making GaN a highly attractive alternative to traditional silicon-based power devices. As the demand for more energy-efficient power systems continues to grow across industries, Power Integrations’ new device sets a new benchmark in the semiconductor industry.
GaN vs. Silicon Carbide (SiC): Cost and Performance Advantages
A key aspect of Power Integrations’ 1700 V GaN device is its potential to replace traditional silicon carbide (SiC) transistors in many power supply applications. SiC has long been considered the gold standard for high-voltage power devices due to its ability to handle higher voltages and temperatures. However, GaN offers several potential advantages over SiC, particularly in terms of cost-effectiveness and performance.
While SiC transistors are well-suited for high-power applications that require extreme thermal performance, GaN’s superior switching capabilities and higher efficiency are driving its growing adoption in power conversion systems. GaN is also less expensive to manufacture than SiC, offering a more affordable alternative for many applications. According to Ezgi Dogmus, activity manager for compound semiconductors at Yole Group, “The 1700 V rating is substantially higher than any other commercially available GaN HEMT that we are aware of. The Power GaN device market is poised to reach $2 billion by the end of the decade, expanding across various application spaces with potentially attractive cost advantages over SiC.”
The ability to integrate GaN-based devices into power systems provides the potential for significant size and weight reductions in power supplies, an essential feature in many industrial and automotive applications where space and efficiency are at a premium. Automotive manufacturers, in particular, are increasingly looking to GaN technology to improve the efficiency of electric vehicle (EV) chargers, inverters, and other critical power electronics.
